Semiconductor device with thin redistribution layers

ABSTRACT

A semiconductor device with thin redistribution layers is disclosed and may include forming a first redistribution layer on a dummy substrate, electrically coupling a semiconductor die to the first redistribution layer, and forming a first encapsulant layer on the redistribution layer and around the semiconductor die. The dummy substrate may be removed thereby exposing a second surface of the first redistribution layer. A dummy film may be temporarily affixed to the exposed second surface of the redistribution layer and a second encapsulant layer may be formed on the exposed top surface of the semiconductor die, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer. The dummy film may be removed to again expose the second surface of the first redistribution layer, and a second redistribution layer may be formed on the first redistribution layer and on the second encapsulant layer.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a CONTINUATION of U.S. patent applicationSer. No. 15/812,741, filed Nov. 14, 2017, and titled “A SEMICONDUCTORDEVICE WITH THIN REDISTRIBUTION LAYERS,” expected to issue as U.S. Pat.No. 10,269,744 on Apr. 23, 2019; which is a CONTINUATION of U.S. patentapplication Ser. No. 15/471,615, filed Mar. 28, 2017, and titled “ASEMICONDUCTOR DEVICE WITH THIN REDISTRIBUTION LAYERS,” now U.S. Pat. No.9,818,708, which is a CONTINUATION of U.S. patent Ser. No. 14/444,450,filed Jul. 28, 2014, and titled “A SEMICONDUCTOR DEVICE WITH THINREDISTRIBUTION LAYERS,” now U.S. Pat. No. 9,607,919, which makesreference to, claims priority to, and claims the benefit of KoreanPatent Application No. 10-2014-0026228, filed on Mar. 4, 2014, thecontents of each of which are hereby incorporated herein by reference,in their entirety.

FIELD

Certain embodiments of the disclosure relate to semiconductor chippackaging. More specifically, certain embodiments of the disclosurerelate to a semiconductor device with thin redistribution layers.

BACKGROUND

In general, a semiconductor package includes a semiconductor die, aplurality of leads electrically connected to the semiconductor die andan encapsulant encapsulating the semiconductor die and the leads. Ingeneral, a POP (Package On Package) refers to a technique for verticallystacking packages incorporating at least one semiconductor die. Sincethe packages are individually tested and only tested packages may bestacked, the POP is advantageous in view of assembling yield.

However, in the conventional POP, since a relatively thick printedcircuit board (PCB) is typically used as a substrate and a solder ballhaving a relatively large diameter is used as an internal conductor, theoverall thickness of the POP is approximately 1 mm or greater. Inaddition, a circuit pattern formed on the substrate has a width ofapproximately 10 μm or greater.

The PCB includes a variety of organic materials, and the coefficient ofthe thermal expansion of the organic material may be significantlydifferent from that of an inorganic material, such as the semiconductordie or an encapsulant, a considerably severe warping phenomenon mayoccur to the completed POP.

Additionally, in order to fabricate a POP, the costly PCB must bepurchased, increasing the manufacturing cost of the POP.

Further limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such systems with the present disclosure as set forth inthe remainder of the present application with reference to the drawings.

BRIEF SUMMARY

A semiconductor device with thin redistribution layers, substantially asshown in and/or described in connection with at least one of thefigures, as set forth more completely in the claims.

Various advantages, aspects and novel features of the presentdisclosure, as well as details of an illustrated embodiment thereof,will be more fully understood from the following description anddrawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIGS. 1A-1O are cross-sectional views illustrating a manufacturingmethod of a semiconductor device, in accordance with an exampleembodiment of the present disclosure.

DETAILED DESCRIPTION

Certain aspects of the disclosure may be found in a semiconductor devicewith thin redistribution layers. Example aspects of the disclosure maycomprise forming a first redistribution layer on a dummy substrate,electrically coupling a semiconductor die to a first surface of thefirst redistribution layer, and forming a first encapsulant layer on thefirst surface of the redistribution layer and around the semiconductordie leaving a top surface of the semiconductor die exposed. The dummysubstrate may be removed thereby exposing a second surface of the firstredistribution layer. A dummy film may be temporarily affixed to theexposed second surface of the redistribution layer and a secondencapsulant layer may be formed on the exposed top surface of thesemiconductor die, a top surface and side edges of the first encapsulantlayer, and side edges of the first redistribution layer. The dummy filmmay be removed to again expose the second surface of the firstredistribution layer, and a second redistribution layer may be formed onthe second surface of the first redistribution layer and on a bottomsurface of the second encapsulant layer. An underfill material may beformed between the semiconductor die and the first surface of the firstredistribution layer before the first encapsulant material is formed.The first encapsulant layer may be formed to a thickness such that a topsurface of the first encapsulant layer is coplanar with the exposed topsurface of the semiconductor die. A solder ball may be formed on thesecond redistribution layer. The solder ball may be electrically coupledto the semiconductor die via the first and second redistribution layers.The dummy film may be wider than the first redistribution layer. Thesecond redistribution layer may be wider than the first redistributionlayer. The dummy substrate and first redistribution layer may besingulated into individual modules before removing the dummy substrate.The bottom surface of the second encapsulant layer may be coplanar withthe second surface of the second redistribution layer. The thickness ofthe first redistribution layer may be 10 μm or less. The firstredistribution layer may be formed by forming a dielectric layer on thedummy substrate, forming holes in the dielectric layer, and depositingone or more metal layers in the formed holes and on the first dielectriclayer.

Various aspects of the present disclosure may be embodied in manydifferent forms and should not be construed as being limited to theexample embodiments set forth herein. Rather, these example embodimentsare provided so that this disclosure will be thorough and complete andwill fully convey the various aspects of the disclosure to those skilledin the art.

In the drawings, the thickness of layers and regions are exaggerated forclarity. Here, like reference numerals refer to like elementsthroughout. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items.

In addition, the terminology used herein is for the purpose ofdescribing particular embodiments only and is not intended to belimiting of the disclosure. As used herein, the singular forms areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, numbers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, numbers, steps, operations,elements, components, and/or groups thereof.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various members, elements, regions, layersand/or sections, these members, elements, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one member, element, region, layer and/or section fromanother. Thus, for example, a first member, a first element, a firstregion, a first layer and/or a first section discussed below could betermed a second member, a second element, a second region, a secondlayer and/or a second section without departing from the teachings ofthe present disclosure.

FIGS. 1A to 1O are cross-sectional views illustrating a manufacturingmethod of a semiconductor device, in accordance with an exampleembodiment of the present disclosure.

Referring to FIGS. 1A to 1D, cross-sectional views illustrating formingof a first redistribution layer (110) are illustrated.

First, as illustrated in FIG. 1A, a dummy substrate 10 having asubstantially planar first surface 10 a and a substantially planarsecond surface 10 b opposite to the first surface 10 a is prepared, anda first dielectric layer 111 is formed on the first surface 10 a of thedummy substrate 10. The dummy substrate 10 may comprise, for example,silicon, low-grade silicon, glass, silicon carbide, sapphire, quartz,ceramic, metal oxide, a metal, or equivalents thereof, but aspects ofthe present disclosure are not limited thereto. The first dielectriclayer 111 may be deposited on the first surface 10 a of the dummysubstrate 10 by chemical vapor deposition (CVD), and first openings 111a may be formed by patterning using a photolithography process and/or alaser process. A portion of the first surface 10 a of the dummysubstrate 10 may be exposed to the outside by the first openings 111 a.The first dielectric layer 111 may include, for example, silicon oxide,silicon nitride or equivalents thereof, but aspects of the presentdisclosure are not limited thereto.

As illustrated in FIG. 1B, first conductive layers 112 may be formed onthe first openings 111 a and the first dielectric layer 111.Accordingly, the first conductive layers 112 may make direct contactwith the first surface 10 a of the dummy substrate 10 through the firstopenings 111 a. The first conductive layers 112 may be formed, forexample, by an electroless plating process for a seed layer based ongold, silver, nickel, titanium and/or tungsten, an electroplatingprocess using copper, or a photolithography process using photoresist,but aspects of the present disclosure are not limited thereto. Inaddition, the first conductive layers 112 may include not only copperbut also, for example, a copper alloy, aluminum, an aluminum alloy,iron, an iron alloy or equivalents thereof, but aspects of the presentdisclosure are not limited thereto.

As illustrated in FIG. 1C, the process of forming the first dielectriclayer 111 and the process of forming the first conductive layers 112 maybe repeated multiple times, thereby completing the first redistributionlayer 110 having a multi-layered structure. That is to say, the firstredistribution layer 110 may comprise a first surface 110 a and a secondsurface 110 b opposite to the first surface 110 a, and the firstconductive layers 112 may be exposed to the first surface 110 a and thesecond surface 110 b. The first redistribution layer 110 may, forexample, comprise a dielectric layer and conductive layers only.However, unlike in a conventional PCB (e.g., a rigid PCB or a flexiblePCB), an organic core layer or an organic build-up layer might not beprovided in the first redistribution layer 110. Therefore, the firstredistribution layer 110 may be formed considerably thinner. Forexample, the first redistribution layer 110 may be formed to a thicknessof 10 μm or less. By contrast, a conventional PCB may generally beformed to a thickness in a range of 200 μm to 300 μm.

As described above, since the first redistribution layer 110 may beformed by a fabrication (FAB) process, the first conductive layers 112may be formed with a width, thickness, and/or pitch in a range of 20 nmto 1000 nm. Therefore, the present disclosure may provide considerablyfine first conductive layers 112, thereby accommodating highlyintegrated semiconductor die. By contrast, redistributions ofconventional PCBs have been generally formed with a width, thicknessand/or pitch in a range of 20 μm to 30 μm.

Here, openings 111 b may be formed on the first dielectric layer 111 ofthe first surface 110 a of the first redistribution layer 110, and someregions of the first conductive layers 112 may be directly exposed tothe outside.

As illustrated in FIG. 1D, a conductive pad 113 may further be formed onthe directly exposed first conductive layers 112 exposed through thefirst surface 110 a of the first redistribution layer 110. Theconductive pad 113 may, for example, be formed by a general platingprocess or photolithography. The conductive pad 113 may be formed toallow a semiconductor die 120 to later be electrically connected theretoand may comprise solder.

As illustrated in FIG. 1E, the semiconductor die 120 may be electricallyconnected to the first redistribution layer 110. The semiconductor die120 has a first surface 120 a and a second surface 120 b opposite to thefirst surface 120 a, and a conductive filler 121 may be provided on thesecond surface 120 b. The semiconductor die 120 may be electricallyconnected to the conductive pad 113 formed on the first surface 110 a ofthe first redistribution layer 110 through the conductive filler 121.That is to say, the semiconductor die 120 may be flip-chip bonded to thefirst redistribution layer 110. The conductive filler 121 may furtherinclude a solder cap 121 a formed at its end to facilitate connectionwith the first redistribution layer 110.

As illustrated in FIG. 1F, an underfill 122 may be injected into a spacebetween the semiconductor die 120 and the first redistribution layer 110and then cured. That is to say, the underfill 122 may be interposedbetween the second surface 120 b of the semiconductor die 120 and thefirst surface 110 a of the first redistribution layer 110 and may beformed to cover the conductive filler 121 and the conductive pad 113.The semiconductor die 120 may be more stably fixed on the firstredistribution layer 110 by the underfill 122. Even if there is adifference in the coefficient of thermal expansion between thesemiconductor die 120 and the first redistribution layer 110, thesemiconductor die 120 and the first redistribution layer 110 may beprevented from being electrically disconnected from each other. In somecases, if a dimension of the first encapsulant 130 (described below) issmaller than a gap between the semiconductor die 120 and the firstredistribution layer 110, the first encapsulant 130 may directly fillthe gap between the semiconductor die 120 and the first redistributionlayer 110. Accordingly, the underfill 122 might not be provided.

As illustrated in FIG. 1G, the first redistribution layer 110 and thesemiconductor die 120 may be encapsulated by the first encapsulant 130.The first encapsulant 130 may be formed to entirely cover the firstsurface 110 a of the first redistribution layer 110 and thesemiconductor die 120, followed by back grinding to allow the firstsurface 120 a of the semiconductor die 120 to be exposed to the outside.The semiconductor die 120 and the first redistribution layer 110 may beprotected from external surroundings by the first encapsulant 130. Inaddition, the first encapsulant 130 may generally include, for example,epoxy, a film, a paste or equivalents thereof, but aspects of thepresent disclosure are not limited thereto.

As illustrated in FIG. 1H, the first redistribution layer 110 and thefirst encapsulant 130 may be diced, thereby singulating individualsemiconductor modules (100 x). The dicing may be performed by, forexample, blade dicing or using a dicing tool, but aspects of the presentdisclosure are not limited thereto.

Here, each of the semiconductor modules 100 x may comprise the firstredistribution layer 110 on which at least one semiconductor die 120 maybe mounted and the semiconductor die 120 which may be encapsulated bythe first encapsulant 130. That is to say, the first redistributionlayer 110 having a plurality of semiconductor dies 120 mounted thereonmay be separated into individual semiconductor modules 100 x each havingat least one semiconductor die 120. In FIG. 1H, two semiconductor die120 are shown in each of the semiconductor modules 100 x, but thepresent disclosure does not limit the number of semiconductor die ineach of the semiconductor modules 100 x. As the result of the dicing,side portions of the first redistribution layer 110 encapsulated by thefirst encapsulant 130 may be exposed to the outside.

In addition, as illustrated in FIG. 1I, the dummy substrate 10 may beremoved from each of the semiconductor modules 100 x. In more detail,the dummy substrate 10 may be removed by grinding to a predeterminedthickness using a wafer support system, and the dummy substrate 10 maythen be completely removed by a dry etching process and/or a wet etchingprocess. In such a manner, the second surface 110 b of the firstredistribution layer 110 may be exposed to the outside. That is to say,as a result of removing the dummy substrate 10, the first conductivelayers 112 may be externally exposed to the second surface 110 b of thefirst redistribution layer 110 through the first dielectric layer 111.

As illustrated in FIG. 1J, in each of the semiconductor modules 100 x, adummy film 20 may be attached to the second surface 110 b of the firstredistribution layer 110. The dummy film 20 may be larger than thesecond surface 110 b of the first redistribution layer 110 in size. Thatis to say, a portion of a first surface 20 a of the dummy film 20, otherthan a portion of the first surface 20 a adhered to the firstredistribution layer 110, may be exposed to the outside. Here, the firstredistribution layer 110 of each of the semiconductor modules 100 x maybe adhered to a central portion of the first surface 20 a of the dummyfilm 20 while a peripheral portion of the first surface 20 a of thedummy film 20 is exposed to the outside.

As illustrated in FIG. 1K, the dummy film 20, the first redistributionlayer 110, the semiconductor die 120 and the first encapsulant 130 maybe encapsulated by the second encapsulant 140. That is to say, thesecond encapsulant 140 may be formed to cover the first surface 20 a ofthe dummy film 20, the side portion between the first surface 110 a andthe second surface 110 b of the first redistribution layer 110, thefirst surface 120 a of the semiconductor die 120, and the firstencapsulant 130. The second encapsulant 140 may thus encapsulate all ofthe regions other than the second surface 110 b of the firstredistribution layer 110 attached to the dummy film 20 in each of theindividual semiconductor modules 100 x attached to the dummy film 20.The second encapsulant 140 may have a planar first surface 140 a and asecond surface 140 b that is coplanar with the second surface 110 b ofthe first redistribution layer 110. The second encapsulant 140 may, forexample, include one of general epoxy, a film, a paste or equivalentsthereof, but aspects of the present disclosure are not limited thereto.

As illustrated in FIG. 1L, after the forming of the second encapsulant140, the dummy film 20 attached to the second surface 110 a of the firstredistribution layer 110 may be removed. An adhesive force of the dummyfilm 20 may be removed by UV light or heat, and the dummy film 20 may beisolated by picking up the second encapsulant 140. As a result ofremoving the dummy film 20, the second surface 110 b of the firstredistribution layer 110 is exposed to the outside. Here, the firstconductive layers 112 may be external to the second surface 110 b of thefirst redistribution layer 110 through the first dielectric layer 111.In addition, as a result of removing the dummy film 20, the secondsurface 140 a of the second encapsulant 140 may also be exposed to theoutside.

As illustrated in FIGS. 1M and 1N, a second dielectric layer 151 and asecond conductive layer 152 may be formed on the second surface 110 b ofthe first redistribution layer 110 and the second surface 140 a of thesecond encapsulant 140, thereby forming a second redistribution layer150. As illustrated in FIG. 1M, the second dielectric layer 151 may bedeposited by a chemical vapor deposition (CVD) device to cover thesecond surface 110 b of the first redistribution layer 110 and thesecond surface 140 b of the second encapsulant 140, followed bypatterning using a photolithography process and/or a laser process,thereby forming the second openings 151 a. Some portions of the firstconductive layers 112 of the first redistribution layer 110 may beexposed to the outside by the second openings 151 a. The firstdielectric layer 111 may include, for example, silicon oxide, siliconnitride or equivalents thereof, but aspects of the present disclosureare not limited thereto.

In addition, as illustrated in FIG. 1N, a second conductive layer 152may be formed on the second openings 151 a and the second dielectriclayer 151. Accordingly, the second conductive layer 152 may make directcontact with the first conductive layers 112 of the first redistributionlayer 110 through the second openings 151 a. The second conductive layer152 may be formed by an electroless plating process for a seed layerbased on gold, silver, nickel, titanium and/or tungsten, anelectroplating process using copper, or a photolithography process usingphotoresist, but aspects of the present disclosure are not limitedthereto. In addition, the second conductive layer 152 may include notonly copper but also, for example, a copper alloy, aluminum, an aluminumalloy, iron, an iron alloy or equivalents thereof, but aspects of thepresent disclosure are not limited thereto.

The process of forming the second dielectric layer 151 and the processof forming the second conductive layer 152 may be repeated multipletimes, thereby completing the second redistribution layer 150 having amulti-layered structure. That is to say, the second redistribution layer150 may comprise a first surface 150 a and a second surface 150 bopposite to the first surface 150 a, and the second conductive layer 152may be exposed to the first surface 150 a and the second surface 150 b.The first surface 150 a of the second redistribution layer 150 may makecontact with the second surface 110 b of the first redistribution layer110 and the second surface 140 a of the second encapsulant 140 so as toentirely cover the same. That is to say, the first surface 150 a of thesecond redistribution layer 150 may be larger than the second surface110 b of the first redistribution layer 110 in size. The secondredistribution layer 150 may, for example, comprise the seconddielectric layer 151 and the second conductive layer 152. However,unlike in a conventional PCB (e.g., a rigid PCB or a flexible PCB), anorganic core layer or an organic build-up layer might not be provided inthe second redistribution layer 150. Therefore, the secondredistribution layer 150 may be formed considerably thinner. Forexample, the first redistribution layer 110 may be formed to a thicknessof 10 μm or less. By contrast, the conventional PCB has been generallyformed to a thickness in a range of 200 μm to 300 μm.

As described above, since the second redistribution layer 150 may beformed by a fabrication (FAB) process, the second conductive layer 152may be formed with a width, thickness and/or pitch in a range of 20 nmto 1000 nm. Therefore, the present disclosure may provide considerablythinner and narrower second conductive layer 152, thereby accommodatinghighly integrated semiconductor die. By contrast, redistributions ofconventional PCBs have been generally formed with a width, thicknessand/or pitch in a range of 20 μm to 30 μm.

In addition, in the second redistribution layer 150, the secondconductive layer 152 may make direct contact with the first conductivelayers 151 of the first redistribution layer 110 to then be electricallyconnected to the first conductive layers 151. That is to say, since thesecond redistribution layer 150 may be directly formed on the secondsurface 110 b of the first redistribution layer 110, a separate bumplayer may not necessarily be provided for connection with aredistribution layer or a substrate, such as a PCB.

As illustrated in FIG. 1O, a solder ball 160 may be formed to beelectrically connected to the second conductive layer 152 exposed to thesecond surface 150 b of the second redistribution layer 150. Forexample, a volatile flux may be coated on a predetermined region of thesecond conductive layer 152 exposed to the outside through the seconddielectric layer 151, and the solder ball 160 may be positioned on theflux, and then heated to ˜150-250° C. to make the flux volatilize toconnect the solder ball 160 to be connected to a region of the secondconductive layer 152. Thereafter, the solder ball 160 may be completelymechanically/electrically connected to the second conductive layer 152through a cooling process.

In such a manner, the semiconductor device 100 having a plurality ofredistribution layers according to the present disclosure may becompleted. In addition, another semiconductor device, package orcomponent may further be mounted on the thus completed semiconductordevice 100.

Meanwhile, as described above, according to the present disclosure,since a PCB might not be used, unlike in conventional devices, thesemiconductor device 100 comprises a reduced thickness and goodelectrical properties by directly connecting conductive layers of theredistribution layers. That is to say, the semiconductor device 100having a thickness of approximately 100 μm to approximately 200 μm byusing a redistribution layer having a thickness of approximately 10 μmor less is provided. In addition, the semiconductor device 100 havinggood electrical properties (with a reduced loss in the power) may beprovided by using redistributions having a width, thickness and/or pitchin a range of 20 nm to 30 nm. Further, since the second redistributionlayer 150 may be directly formed on the first redistribution layer 110,the redistribution layers 110 and 150 may be directly connected to eachother, thereby simplifying the process and improving electric propertiesof the semiconductor device 100. In addition, since the dielectriclayers 111 and 151 included in the redistribution layers 110 and 150 maycomprise inorganic material, it is possible to provide the semiconductordevice 100 having a coefficient of thermal expansion similar to that ofthe semiconductor die 120 or the first encapsulant 130 and the secondencapsulant 140 while suppressing a warp phenomenon.

Further, according to the present disclosure, since the redistributionlayer may be formed using existing deposition equipment, platingequipment and/or photolithography equipment without purchasing theconventional PCB that is expensive, the semiconductor device 100 can bemanufactured at a low cost.

This disclosure provides example embodiments. The scope of the presentdisclosure is not limited by these example embodiments. Numerousvariations, whether explicitly provided for by the specification orimplied by the specification, such as variations in structure,dimension, type of material and manufacturing process, may beimplemented by one skilled in the art in view of this disclosure withoutdeparting from the spirit and scope of this disclosure.

In an example embodiment of the disclosure a semiconductor device withthin redistribution layers is disclosed and may comprise forming a firstredistribution layer on a dummy substrate, electrically coupling asemiconductor die to a first surface of the first redistribution layer,and forming a first encapsulant layer on the first surface of theredistribution layer and around the semiconductor die leaving a topsurface of the semiconductor die exposed. The dummy substrate may beremoved thereby exposing a second surface of the first redistributionlayer. A dummy film may be temporarily affixed to the exposed secondsurface of the redistribution layer and a second encapsulant layer maybe formed on the exposed top surface of the semiconductor die, a topsurface and side edges of the first encapsulant layer, and side edges ofthe first redistribution layer.

The dummy film may be removed to again expose the second surface of thefirst redistribution layer, and a second redistribution layer may beformed on the second surface of the first redistribution layer and on abottom surface of the second encapsulant layer. An underfill materialmay be formed between the semiconductor die and the first surface of thefirst redistribution layer before forming the first encapsulant layer.The first encapsulant layer may be formed to a thickness such that a topsurface of the first encapsulant layer is coplanar with the exposed topsurface of the semiconductor die. A solder ball may be formed on thesecond redistribution layer. The solder ball may be electrically coupledto the semiconductor die via the first and second redistribution layers.

The dummy film may be wider than the first redistribution layer. Thesecond redistribution layer may be wider than the first distributionlayer. The dummy substrate and first redistribution layer may besingulated into individual modules before the dummy substrate isremoved. The bottom surface of the second encapsulant layer may becoplanar with the second surface of the second redistribution layer. Thethickness of the first redistribution layer may be 10 μm or less. Thefirst redistribution layer may be formed by forming a dielectric layeron the dummy substrate, forming holes in the dielectric layer, anddepositing one or more metal layers in the formed holes and on the firstdielectric layer.

While various aspects of the present disclosure have been described withreference to certain supporting embodiments, it will be understood bythose skilled in the art that various changes may be made andequivalents may be substituted without departing from the scope of thepresent disclosure. In addition, many modifications may be made to adapta particular situation or material to the teachings of the presentdisclosure without departing from its scope. Therefore, it is intendedthat the scope of various aspects of the present disclosure not belimited to the particular embodiments disclosed, but that the presentinvention will include all embodiments falling within the scope of theappended claims.

What is claimed is:
 1. A semiconductor device comprising: a first signaldistribution structure (SDS1) having a top SDS1 side and a bottom SDS1side, the first signal distribution structure comprising: a plurality ofSDS1 dielectric layers comprising a first SDS1 dielectric layer and asecond SDS1 dielectric layer; and a plurality of SDS1 conductive layerscomprising: an SDS1 conductive via extending generally verticallythrough the first SDS1 dielectric layer; and an SDS1 laterally-runningtrace connected to the SDS1 conductive via; a first semiconductor die onthe top side of the first signal distribution structure; a secondsemiconductor die on the top side of the first signal distributionstructure; a first material on the top SDS1 side and laterallysurrounding the first and second semiconductor dies; a second materialthat laterally surrounds the first material and the first signaldistribution structure; and a second signal distribution structure(SDS2) on the bottom SDS1 side and on a bottom side of the secondmaterial.
 2. The semiconductor device of claim 1, wherein the firstmaterial comprises an epoxy.
 3. The semiconductor device of claim 1,wherein the first material directly contacts a lateral side of the firstsemiconductor die, and directly contacts a lateral side of the secondsemiconductor die.
 4. The semiconductor device of claim 3, wherein thesecond material directly contacts a lateral side of the first material.5. The semiconductor device of claim 1, comprising underfill material,different from the first material, between the first semiconductor dieand the first signal distribution structure and between the secondsemiconductor die and the first signal distribution structure, whereinthe underfill material contacts a lateral side of the firstsemiconductor die and a lateral side of the second semiconductor die. 6.The semiconductor device of claim 5, wherein all lateral sides of theSDS1 trace are separated from the underfill material.
 7. Thesemiconductor device of claim 1, wherein the SDS1 conductive via doesnot extend generally vertically through an entirety of the first signaldistribution structure.
 8. The semiconductor device of claim 1, whereinthe first and second semiconductor dies are soldered to the first signaldistribution structure.
 9. The semiconductor device of claim 1,comprising a first solder-capped conductive pillar that couples thefirst semiconductor die to the first signal distribution structure, anda second solder-capped conductive pillar that couples the secondsemiconductor die to the first signal distribution structure.
 10. Thesemiconductor device of claim 1, wherein the second signal distributionstructure directly contacts the first signal distribution structure. 11.The semiconductor device of claim 1, wherein the plurality of SDS1dielectric layers comprises a lowermost SDS1 dielectric layer; thesecond signal distribution structure (SDS2) comprises a plurality ofSDS2 dielectric layers; and the plurality of SDS2 dielectric layerscomprises an uppermost SDS2 dielectric layer that directly contacts thelowermost SDS1 dielectric layer.
 12. The semiconductor device of claim1, wherein the second signal distribution structure (SDS2) comprise anSDS2 dielectric layer that is made of a same dielectric material as thefirst SDS1 dielectric layer.
 13. A semiconductor device comprising: afirst signal distribution structure (SDS1) having a top SDS1 side and abottom SDS1 side, the first signal distribution structure comprising: anSDS1 dielectric layer comprising a first dielectric material; and aplurality of SDS1 conductive layers comprising: an SDS1 conductive viaextending generally vertically through the SDS1 dielectric layer; and anSDS1 laterally-running trace connected to the SDS1 conductive via; afirst semiconductor die on the top side of the first signal distributionstructure; a second semiconductor die on the top side of the firstsignal distribution structure; a first material on the top SDS1 side andlaterally surrounding the first and second semiconductor dies; a secondmaterial that laterally surrounds the first material and the firstsignal distribution structure; and a second signal distributionstructure (SDS2) on the bottom SDS1 side and on a bottom side of thesecond material, the second signal distribution structure comprising: anSDS2 dielectric layer comprising the first dielectric material; and aplurality of SDS2 conductive layers comprising: an SDS2 conductive viaextending generally vertically through the SDS2 dielectric layer; and anSDS2 laterally-running trace connected to the SDS2 conductive via. 14.The semiconductor device of claim 13, wherein the first material and thesecond material are different materials.
 15. The semiconductor device ofclaim 14, wherein the first material comprises an epoxy, and the secondmaterial comprises a material different from the epoxy.
 16. Thesemiconductor device of claim 13, wherein the first dielectric materialis an inorganic dielectric material.
 17. The semiconductor device ofclaim 13, wherein at least one dielectric layer of the semiconductordevice comprises a dielectric film.
 18. A method of manufacturing asemiconductor device, the method comprising: receiving a first signaldistribution structure (SDS1) having a top SDS1 side and a bottom SDS1side, the first signal distribution structure comprising: a plurality ofSDS1 dielectric layers comprising a first SDS1 dielectric layer and asecond SDS1 dielectric layer; and a plurality of SDS1 conductive layerscomprising: an SDS1 conductive via extending generally verticallythrough the first SDS1 dielectric layer; and an SDS1 laterally-runningtrace connected to the SDS1 conductive via; coupling a firstsemiconductor die on the top side of the first signal distributionstructure; coupling a second semiconductor die on the top side of thefirst signal distribution structure; forming a first material on the topSDS1 side and laterally surrounding the first and second semiconductordies; forming a second material that laterally surrounds the firstmaterial and the first signal distribution structure; and forming asecond signal distribution structure (SDS2) on the bottom SDS1 side andon a bottom side of the second material.
 19. The method of claim 18,wherein the SDS1 conductive via does not extend generally verticallythrough an entirety of the first signal distribution structure.
 20. Themethod of claim 18, wherein the plurality of SDS1 dielectric layerscomprises a lowermost SDS1 dielectric layer; the second signaldistribution structure (SDS2) comprises a plurality of SDS2 dielectriclayers; and the plurality of SDS2 dielectric layers comprises anuppermost SDS2 dielectric layer that directly contacts the lowermostSDS1 dielectric layer.